Minot Lab Wiki

(updated 04-08-2010)

5 min dehydration bake 190°C
spin LOR3B photoresist at 4000 rpm for 45 sec (bilayer process only)
- Deposits ~250 nm of photoresist (according to LOR3B documentation)
- ideal LOR3B thickness = 1.25*metal thickness
- Skip this step for single layer process
4 min softbake 190°C (bilayer process only)
- Skip this step for single layer process
spin S1813 photoresist at 4000 rpm for 30 sec
2 min softbake 115°C
6 sec exposure
45 sec develop
- Developing solution: 4 parts DI H20, 1 part Shipley Mircoposit MF-351
- Gently agitate substrate in developer bath. Afterward, gently spray rinse DI H2O followed by a quick dunk in a DI H20 bath with some agitation.
deposit 35nm metal
remove underlayer with mircoposit 1165 (located in Weniger 306 lab)
- Put chips in 60°C remover for 30 min
- Transfer to fresh 60°C remover for 30 min
rinse DI H20 then blow dry
- Never rinse chip with acetone while LOR3B or it's residue is still on the chip! The LOR3B combines with acetone to form a sludge that can only be removed by scraping!