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pre-2010_recipes
Single-layer resist
(updated 02-01-2010)
- 5 min prebake 115°C
- spin S1813 photoresist at 4000 rpm for 30 sec
- 3 min bake 115°C (microchem says this is too long)
- 6 sec exposure
- Quartz exposure: Place a dummy SiO2 substrate upside down (rough side up) with the quartz on top in the contact aligner. The Si layer underneath the quartz will help simulate SiO2 chip conditions.
- 40 sec develop
- developer solution: 4 parts DI H20, 1 part MF-351 developer
Bilayer Resist
(updated 02-09-2009)
- 5 min prebake 115°C
- spin LOR3B photoresist at 2500 rpm for 45 sec
- Deposits ~350 nm of photoresist (according to LOR3B documentation)
- 2 min bake 190°C
- spin S1813 photoresist at 4000 rpm for 30 sec
- 2 min bake 115°C
- 5 sec exposure
- 20 sec develop
- Developing solution: Shipley Mircoposit CD-26
- No agitation
- 10 sec DI H2O bath
- No agitation
- deposit 35nm metal
- remove underlayer with mircoposit 1165 (located in Weniger 306 lab)
- Put chips in 70°C remover for ~15 min
- Transfer to fresh 70°C remover for ~20 min
- Transfer to fresh 70°C remover for ~25 min
- rinse with acetone, IPA then blow dry
pre-2010_recipes.txt · Last modified: 2019/09/09 21:17 by ethanminot
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