Eric is an EE grad student who TAs the EE class on chip making & has made hundreds of chips in the Owen clean room. His advice should be heeded.

• Spin 1818 photoresist at 3000 rpm for 30 seconds (2 um layer)

• Bake at 85C for 2 minutes

• Expose for 6-8 seconds

• Bake at 85C for 2 minutes (skip this step for metal deposition)

• Develop 15-25 seconds in diluted 351 developer (4 DI water : 1 developer) (Develop 8-10 seconds for metal deposition)
  • Rinse quickly & 'like crazy' afterward (important)
• Bake at 85C for 5 minutes (skip this step for metal deposition)
  • Eric says 5 minutes may be too long. Watch for cracks in the photoresist around the edges, cracks mean the bake is too long.

• Apply metal deposition layer quickly after development. Don't wait longer than a few hours.
• After rinsing with Acetone rinse with IPA & quickly blow it dry with N2 gas. This leaves less residue than rinsing with IPA & then DI water.