(updated 04-08-2010)

• 5 min dehydration bake 190°C
• spin LOR3B photoresist at 4000 rpm for 45 sec (bilayer process only)
  • Deposits ~250 nm of photoresist (according to LOR3B documentation)
  • ideal LOR3B thickness = 1.25*metal thickness
  • Skip this step for single layer process
• 4 min softbake 190°C (bilayer process only)
  • Skip this step for single layer process
• spin S1813 photoresist at 4000 rpm for 30 sec
• 2 min softbake 115°C
• 6 sec exposure
• 45 sec develop
  • Developing solution: 4 parts DI H20, 1 part Shipley Mircoposit MF-351
  • Gently agitate substrate in developer bath. Afterward, gently spray rinse DI H2O followed by a quick dunk in a DI H20 bath with some agitation.
• deposit 35nm metal
• remove underlayer with mircoposit 1165 (located in Weniger 306 lab)
  • Put chips in 60°C remover for 30 min
  • Transfer to fresh 60°C remover for 30 min
• rinse DI H20 then blow dry
  • Never rinse chip with acetone while LOR3B or it's residue is still on the chip! The LOR3B combines with acetone to form a sludge that can only be removed by scraping!

• Pre-2010 Recipes
• Eric Sundholm's Recipe