IMPORTANT NOTE: The recipe below is for illustrative purposes only. For current recipe see the main Device Making page.
Note: Data sheets for S1813 and LOR3B are available at T:\Physics\Minot Group\Group documents\Manuals\Device Making
Start-up
Turn on power to aligner
Turn on microscope light
Turn on power to mercury lamp
Turn on nitrogen flow, and check pressure. Press start on the front of the lamp power supply
Turn on power on aligner control panel
Wait 30 minutes for the lamp to heat up
Turn on both hot plates (190C & 115 C)
Substrate Preparation (optional)
Sonicate
Scribe the back side (for transparent substrates)
Wash substrate with acetone, isopropyl alcohol, and DI water
Bake for ten minutes
Get a chuck for the spinner
Get aluminum foil to cover spinner tray
Place the substrate onto the center of the chuck
It should be suctioned into place, and have right side up
Press pedal to start, check centering
Deposit LOR3B Photoresist (Metal deposition only)
Quickly cover 2/3 of chip with LOR3B photoresist (clear color)
Spin at 2500 rpm for 45 seconds
Bake the substrate at 190C for 2 minutes
Deposit S1813 Photoresist
Prepare the chip to be spun again
Quickly cover 2/3 of chip with S1818 photoresist (red color)
Spin at 4000 rpm for 45 seconds
Bake the substrate at 115C for 2 minutes (HF procedure is different, see below.
Idea for quartz)
Exposure
Place the mask on the mask holder by flipping the holder upside down and placing the mask on top. The chrome side should now be facing up
Press the vacuum mask button, and check if the mask is secure
Place the mask in the aligner and screw down
Check for correct spacing between the sample and mask
Put a clean 'dummy' substrate on the chuck
Adjust front dial so that when levers are in contact mode the chip doesn't touch the mask
Slowly adjust front dial until the substrate touching the mask just pushes the fine spacing adjustment lever toward the separated position
When the fine spacing adjustment lever is in the contact position you should be able to see an interference pattern created between the mask & substrate. When the lever is in the separation position the pattern should disappear.
Remove the dummy substrate & place the sample on the tray making sure it lines up well with the mask
One method to do this is to align the microscope with the corner of the mask, then remove the mask, and align the corner of the sample to the same spot.
Place the aligner in contact
Align mask with substrate ( adjust separation lever )
Set the exposure time
Range 3sec minimum, standard 5sec, 8 over exposed)
Etch 4 sec
metal exposure: 5sec
exaggerated catalyst pads: 5-8sec
Press expose
Developing
Take out the container for the photo-resist waste
Take out the developing solution (Insert developer type here)
Pour the developer into an appropriately size beaker
Place the sample into the developer for about 10 seconds and shake gently. Lower exposure times may take longer. If you can see a red residue on the sample, it is under developed. The sample can be placed back in the developer if it appears underdeveloped
Take out and immediately wash with DI water, washing over the waste container
HF etching
Spin S1813 4000rpm 45 sec
Bake 85 for 2min
expose 4 sec
Bake 85 for 3min
Develop 10sec with gentle agitation
Bake 115 for 5min
Etch for around 1 min, etch rate is 800A/min (Soon will have slower rate etch solution)
Clean up
Pour the developer into the waste container
Wash the chuck with IPA/DIwater over the waste container
Return the chuck
Take out the photo resist waste bag
Remove the aluminum foil and place it into the bag, being careful not to hold any photo-resist outside of the fume hood.
Close the waste containers and put them away
Wash the counter top with acetone and a paper towel.
Shut Down
Turn off the hot plate and spinner
Turn off the microscope light
If no one plans to use the aligner within the next 24 hours turn off the mercury lamp
Leave the nitrogen flowing for 30 minutes while it cools
Turn off the aligner
Turn off the aligner power supply.