photolithography
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| photolithography [2026/08/13 16:15] – gus | photolithography [2026/08/27 12:37] (current) – [General Photolithography Procedures] joey | ||
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| - Set you spin parameters in the spinner. | - Set you spin parameters in the spinner. | ||
| - | - Blow off your substrates (do this for every layer if you don't have 2D materials on the substrate -Gus) | + | - Blow off your substrates (do this for every layer if you don't have 2D materials on the substrate, I should link an image which shows why! -Gus) |
| - Load your substrate onto the vacuum chuck. Use the largest chuck which does not cover more than ~80% of the bottom of the sample. This helps prevent vacuum leaks or resist being pulled into the vacuum. | - Load your substrate onto the vacuum chuck. Use the largest chuck which does not cover more than ~80% of the bottom of the sample. This helps prevent vacuum leaks or resist being pulled into the vacuum. | ||
| - Cleanly pipette resist onto center of chip. Immediately spin for 45 s. | - Cleanly pipette resist onto center of chip. Immediately spin for 45 s. | ||
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| ===Photoresist removal=== | ===Photoresist removal=== | ||
| + | Prepare a bath of acetone (for single layer resist) or PG Remover (for bilayer resist) in a large crystallizing dish. The dishes labelled ' | ||
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| + | Place the chips in the bath and cover with a watch glass. Liftoff can take as little as 30 minutes or as long as several hours depending on the process and patterning. When checking the liftoff status, gently swirling the bath can help remove loose metal from the surface of the chips. If needed, it can also be helpful to place the dish in the sonicator for 5 minutes to remove stubborn metal and photoresist. | ||
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| + | When liftoff is visibly complete, prepare a rinse bath of IPA (for single layer resist) or DDI water (for bilayer resist) in similar crystallization dishes. With bilayer resist, prepare three baths to be used consecutively; | ||
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| + | Finally, remove the chip from the rinse bath and (again, assuming there are no fragile materials on your chip) blow-dry the chip using N2. Examine your lithography under a microscope. | ||
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| Matt has documented that hot PG remover leaves less PR residue than any other method we have tried. | Matt has documented that hot PG remover leaves less PR residue than any other method we have tried. | ||
| - | We are also currently working on developing a good process for cleaning up chips after lithography using AFM cleaning | + | This liftoff procedure can still leave behind ~5 nm of photoresist residue on the substrate. If your device' |
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| + | When the chamber pressure reaches ~150 mTorr, open the O2 valve directly next to the plasma cleaner. This should flood the chamber with O2, and the pressure should spike and then settle around 5-7 Torr. Ensure the RF dial is set to " | ||
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| + | Photoresist residue or other lithography defects can be optically invisible; it is recommended that you AFM your lithography as necessary. | ||
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| + | We are also currently working on developing a good process for cleaning up chips after lithography using AFM cleaning. | ||
photolithography.1786662904.txt.gz · Last modified: 2026/08/13 16:15 by gus
