(updated 02-01-2010)

• 5 min prebake 115°C
• spin S1813 photoresist at 4000 rpm for 30 sec
• 3 min bake 115°C (microchem says this is too long)
• 6 sec exposure
  • Quartz exposure: Place a dummy SiO2 substrate upside down (rough side up) with the quartz on top in the contact aligner. The Si layer underneath the quartz will help simulate SiO2 chip conditions.
• 40 sec develop
  • developer solution: 4 parts DI H20, 1 part MF-351 developer

(updated 02-09-2009)

• 5 min prebake 115°C
• spin LOR3B photoresist at 2500 rpm for 45 sec
  • Deposits ~350 nm of photoresist (according to LOR3B documentation)
• 2 min bake 190°C
• spin S1813 photoresist at 4000 rpm for 30 sec
• 2 min bake 115°C
• 5 sec exposure
• 20 sec develop
  • Developing solution: Shipley Mircoposit CD-26
  • No agitation
• 10 sec DI H2O bath
  • No agitation
• deposit 35nm metal
• remove underlayer with mircoposit 1165 (located in Weniger 306 lab)
  • Put chips in 70°C remover for ~15 min
  • Transfer to fresh 70°C remover for ~20 min
  • Transfer to fresh 70°C remover for ~25 min
• rinse with acetone, IPA then blow dry