===Single-layer resist=== 
//(updated 02-01-2010)//
  *5 min prebake 115°C
  *spin S1813 photoresist at 4000 rpm for 30 sec
  *3 min bake 115°C (microchem says this is too long)
  *6 sec exposure
    * Quartz exposure: Place a dummy SiO2 substrate upside down (rough side up) with the quartz on top in the contact aligner. The Si layer underneath the quartz will help simulate SiO2 chip conditions.
  *40 sec develop
    *developer solution: 4 parts DI H20, 1 part MF-351 developer

===Bilayer Resist ===
//(updated 02-09-2009)//
  *5 min prebake 115°C
  *spin LOR3B photoresist at 2500 rpm for 45 sec
    * Deposits ~350 nm of photoresist (according to LOR3B documentation)
  *2 min bake 190°C
  *spin S1813 photoresist at 4000 rpm for 30 sec
  *2 min bake 115°C
  *5 sec exposure
  *20 sec develop
    * Developing solution: Shipley Mircoposit CD-26
    * No agitation
  *10 sec DI H2O bath
    * No agitation
  *deposit 35nm metal
  *remove underlayer with mircoposit 1165 (located in Weniger 306 lab)
    * Put chips in 70°C remover for ~15 min
    * Transfer to fresh 70°C remover for ~20 min
    * Transfer to fresh 70°C remover for ~25 min
  *rinse with acetone, IPA then blow dry