=== Photoresist processing recipe ===
//(updated 04-08-2010)//
  *5 min dehydration bake 190°C
  *spin LOR3B photoresist at 4000 rpm for 45 sec (//bilayer process only//)
    * Deposits ~250 nm of photoresist (according to LOR3B documentation)
    * ideal LOR3B thickness = 1.25*metal thickness
    * //Skip this step for single layer process//
  *4 min softbake 190°C (//bilayer process only//)
    * //Skip this step for single layer process//
  *spin S1813 photoresist at 4000 rpm for 30 sec
  *2 min softbake 115°C
  *6 sec exposure
  *45 sec develop
    * Developing solution: 4 parts DI H20, 1 part Shipley Mircoposit MF-351
    * Gently agitate substrate in developer bath. Afterward, gently spray rinse DI H2O followed by a quick dunk in a DI H20 bath with some agitation.
  *deposit 35nm metal
  *remove underlayer with mircoposit 1165 (located in Weniger 306 lab)
    * Put chips in 60°C remover for 30 min
    * Transfer to fresh 60°C remover for 30 min
  *rinse DI H20 then blow dry
    * Never rinse chip with acetone while LOR3B or it's residue is still on the chip! The LOR3B combines with acetone to form a sludge that can only be removed by scraping!

===Other recipes=== 
  *[[Pre-2010 Recipes]]
  *[[Eric Sundholm's Recipe]]